MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

Subgroup 1A

Temperature cycling (air

1051

20 cycles, except high temperature shall be 150 C and low

45 devices

temperature shall be -195�C.

to air)

c=0

1071

Hermetic seal

Electrical measurement

See table I, subgroup 2 and table III herein.

Subgroup 1B

-65�C to +175�C, 500 cycles.

Temperature cycling (air

1051

45 devices

to air)

c=0

Hermetic seal

1071

Electrical measurement

See table I, subgroup 2 and table III herein.

Subgroup 2

22 devices

c=0

1,000 hours, VR = VRWM (see col. 2 of 1.3).

Steady state dc blocking

1048

life

Electrical measurements

See table I, subgroup 2 (except ZθJX need not be performed)

and table III herein. For irradiated devices, include trr as an

end-point measurement.

Subgroup 4

See MIL-PRF-19500.

Thermal impedance

curves

Subgroup 5

22 devices

c=0

Pressure (see 1.3.2); t = 1 min. DC method;

Barometric pressure,

1001

VR = VRWM (see 1.3.2); IR1 = 1.0 �A dc maximum.

reduced (altitude

operation)