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MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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img
MIL-PRF-19500/420M
30
L=0
25
20
15
L=0.25
10
L=0.375
L=0.5
5
L=0.75
0
0
20
40
60
80
100
120
140
160
180
200
TL Degrees Centigrade
Maximum lead temperature in °C (TL) at point "L" from body (for maximum operating junction temperature
of +175°C with equal two-lead conditions).
L
RθJL
°C/W
Inches
mm
.000
0.00
6.5
.250
6.35
14.5
.375
9.53
22
.500
12.70
26
.750
19.05
35.5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
FIGURE 11. Maximum power in watts versus lead temperature.
25



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