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MIL-PRF-19500-420 Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And JankceThis specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds \(category 1\) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/420M
Average Sine Current (Io) vs Total Power (Po)
Max 1N5554 ss420, <1.3V@9A
4.5
4
3.5
3
2.5
2
1.5
Po (W) for: Model @ Tj=25C
1
Po (W) for: Model @ Tj=100C
Po (W) for: Model @ Tj=175C
0.5
0
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
Io (A)
FIGURE 13. Rectifier power versus Io (average forward current).
B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area
Still Air, PCB Horizontal
1000
100
1oz Foil
2oz Foil
3oz Foil
10
0.001
0.01
0.1
1
10
100
Pad Area per Pad (in2)
FIGURE 14. Thermal resistance versus pad area (for each pad) with 1, 2 and 3 oz copper.
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