MIL-PRF-19500-430 Semiconductor Device, Dual Field Effect Transistors, N-Channel, Silicon Types 2N5545, 2N5546, And 2N5547, Jan, Jantx, And JantxvThis specification covers the performance requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/430C

* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

Qualification

and

large lot quality

Method

Conditions

conformance

inspection

Subgroup 1

45 devices

c=0

-55�C to +150�C, 500 cycles

Temperature cycling

1051

Hermetic seal

1071

As applicable

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and table II, all steps

Subgroup 2

45 devices

c=0

Blocking life

1048

1,000 hours minimum, TA = +150�C, VDG or

VGS = 80 percent of rated.

Electrical measurements

See table I, subgroup 2 and table II, all steps

Subgroups 4 and 5

Not applicable