For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-430 Semiconductor Device, Dual Field Effect Transistors, N-Channel, Silicon Types 2N5545, 2N5546, And 2N5547, Jan, Jantx, And JantxvThis specification covers the performance requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
. . .
MIL-PRF-19500/430C
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
2071
n = 45 devices, c = 0
examination
Subgroup 2
µA dc
Bias condition C;
3411
IGSS1
-1.0
Reverse gate current
VGS = -50 V dc;
VDS = 0
Reverse gate current
3411
Bias condition C;
IGSS2
-0.1
nA dc
VGS = -30 V dc;
VDS = 0
Drain current
3413
Bias condition C;
IDSS
0.5
8.0
mA dc
VDS = 15 V dc;
VGS = 0
Gate current
VDG = 15 V dc
IG
-50
pA dc
ID = 200 µA dc
3403
VDS = 15 V dc
Gate-source cutoff
VGS(off)
-0.5
-4.5
V dc
voltage
ID = 0.5 nA dc
Gate-source voltage
3403
VDG = 15 V dc;
|VGS1 - VGS2|1
*
differential
ID = 50 µA dc;
(see 4.4.4)
2N5545
5
mV dc
2N5546
10
mV dc
2N5547
15
mV dc
VDG = 15 V dc;
|VGS1 - VGS2|2
Gate-source voltage
3403
*
differential
ID = 200 µA dc;
(see 4.4.4)
2N5545
5
mV dc
2N5546
10
mV dc
2N5547
15
mV dc
See footnotes at end of table.
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.