INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/431E
shall be completed by 12 December 2011.
12 September 2011
SUPERSEDING
MIL-PRF-19500/431D
21 November 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON,
TYPES 2N4091, 2N4092, 2N4093, 2N4091UB, 2N4092UB, AND 2N4093UB,
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon field-effect
transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance are
provided for each device type as specified in MIL-PRF-19500.
1.3 Maximum ratings. TA = +25°C, unless otherwise specified.
VDS
VDG
VGS
IG
TJ
TSTG
PT (1)
Type
TA = +25°C
(free air)
°C
°C
W
V dc
V dc
V dc
mA d
0.36
40
40
-40
10
2N4091, UB
-65 to +175
-65 to +200
0.36
40
40
-40
10
2N4092, UB
-65 to +175
-65 to +200
2N4093, UB
0.36
40
40
-40
10
-65 to +175
-65 to +200
(1) Derate linearly 2.4 mW/°C for TA > +25°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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