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MIL-PRF-19500-431 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon, Types 2N4091, 2N4092, 2N4093, 2N4091Ub, 2N4092Ub, And 2N4093Ub Jan, Jantx, And JantxvThis specification covers the performance requirements for N-channel, junction, silicon field-effect transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/431E
TABLE I. Group A inspection.
MIL-STD-750
Inspection
1/
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Breakdown voltage, gate
3401
Bias condition C; VDS = 0 V dc;
V(BR)GSS
-40
V dc
IG = -1.0 µA dc
to source
Gate reverse current
3411
VGS = -20 V dc; VDS = 0; bias
IGSS1
-0.1
nA dc
condition C
Drain current
3413
VDS = 20 V dc; bias condition C
-0.1
nA dc
ID(off)1
2N4091, UB
VGS = -12 V dc
VGS = -8 V dc
2N4092, UB
VGS = -6 V dc
2N4093, UB
Drain current
3413
VDS = 20 V dc; VGS = 0 (pulsed,
IDSS
see 4.5.1); bias condition C
2N4091, UB
30
mA dc
2N4092, UB
15
mA dc
2N4093, UB
8
mA dc
Static drain to source on-
3421
VGS = 0; pulsed (see 4.5.1); bias
rDS(on)
state resistance
condition B; ID = 1.0 mA dc
Ω
2N4091, UB
30
Ω
2N4092, UB
50
Ω
2N4093, UB
80
Drain to source "on"
3405
VGS = 0; bias condition B
VDS(on)
state voltage
2N4091, UB
0.2
V dc
ID = 6.6 mA dc
ID = 4.0 mA dc
2N4092, UB
0.2
V dc
ID = 2.5 mA dc
2N4093, UB
0.2
V dc
See footnote at end of table.
8



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