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MIL-PRF-19500-431 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon, Types 2N4091, 2N4092, 2N4093, 2N4091Ub, 2N4092Ub, And 2N4093Ub Jan, Jantx, And JantxvThis specification covers the performance requirements for N-channel, junction, silicon field-effect transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/431E
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High temperature
operation:
µA dc
Gate current
3411
Bias condition C; VDS = 0 V dc
IGSS2
-0.2
VGS = -20 V dc;
Drain current
3413
VDS = 20 V dc; bias condition A
ID(off)2
VGS = -12 V dc
µA dc
2N4091, UB
0.2
VGS = -8 V dc
µA dc
2N4092, UB
0.2
VGS = -6 V dc
µA dc
2N4093, UB
0.2
Subgroup 4
Small-signal common-
3431
VDS = 20 V dc; VGS = 0;
16
pF
Ciss
source short-circuit input
f = 1 MHz
capacitance
Small-signal common-
3433
VDS = 0 V dc; VGS = 20;
5
pF
Crss
source reverse transfer
f = 1 MHz
capacitance
Turn-on delay time
td(on)
2N4091, UB
15
ns
2N4092, UB
15
ns
2N4093, UB
15
ns
Rise time
tr
2N4091, UB
10
ns
2N4092, UB
20
ns
2N4093, UB
40
ns
Turn-off delay time
td(off)
2N4091, UB
40
ns
2N4092, UB
60
ns
2N4093, UB
80
ns
Subgroups 5, 6, 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
9



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