The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 4 December 2013.
MIL-PRF-19500/501E
4 September 2013
SUPERSEDING
21 April 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N6051 AND 2N6052, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, Darlington, silicon, power
transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-3).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
*
PT (1)
PT (1)
VCBO
VCEO
VEBO
IC
IB
TJ and TSTG
RθJC
Type
TC =
TC =
+25°C
+100°C
°C
W
W
°C/W
V dc
V dc
V dc
A dc
A dc
2N6051
150
75
1.0
80
80
5
12
0.2
-55 to +175
2N6052
150
75
1.0
100
100
5
12
0.2
-55 to +175
(1) Derate linearly at 1.00 W/°C above TC > +25°C (see figure 2).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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