MIL-PRF-19500/501E
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3131
See 4.3.2
°C/W
ZθJX
Breakdown voltage
3011
Bias condition D; IC = 100 mA dc,
V(BR)CEO
collector to emitter
pulsed (see 4.5.1)
2N6051
80
V dc
2N6052
100
V dc
Collector to emitter cutoff
3041
Bias condition A;
ICEX1
current
VBE = 1.5 V dc
2N6051
VCE = 80 V dc
.01
mA dc
2N6052
VCE = 100 V dc
.01
mA dc
Collector to emitter cutoff
3041
Bias condition D
1
mA dc
ICEO
current
2N6051
VCE = 40 V dc
2N6052
VCE = 50 V dc
Emitter to base cutoff
3061
Bias condition D;
2
mA dc
IEBO
current
VBE = 5 V dc,
Base to emitter
3066
Test condition B; IC = 6 A dc,
2.8
V dc
VBE
non-saturated
VCE = 3 V dc,
pulsed (see 4.5.1)
Base to emitter saturated
3066
Test condition A; IC = 12 A dc,
4.0
V dc
VBE(sat)
IB = 120 mA dc,
pulsed (see 4.5.1)
Collector to emitter
3071
IC = 12 A dc; IB = 120 mA dc
3.0
V dc
VCE(sat)1
saturated voltage
pulsed (see 4.5.1)
Collector to emitter
3071
IC = 6 A dc; IB = 24 mA dc, pulsed
2.0
V dc
*
VCE(sat)2
saturated voltage
(see 4.5.1)
Forward current
3076
VCE = 3 V dc; IC = 1 A dc,
1,000
hFE1
transfer ratio
pulsed (see 4.5.1)
Forward current
3076
VCE = 3 V dc; IC = 6 A dc,
1,000
18,000
hFE2
transfer ratio
pulsed (see 4.5.1)
Forward current
3076
VCE = 3 V dc; IC = 12 A dc,
150
hFE3
pulsed (see 4.5.1)
transfer ratio
See footnotes at end of table.
8
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