MIL-PRF-19500-501 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6051, And 2N6052, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/501E

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein and delta measurements shall be in accordance with table II herein.

4.4.3.1. Group C inspection, appendix E, table E-VII of MIL-PRF-19500.

Subgroup

Method

Conditions

2036

Test condition A, weight = 10 pounds, t = 15 s.

See 4.3.2, RθJC = 1�C/W.

3131

VCB ≥ 10 V dc, ĆTJ between cycles ≥ +100�C, ton = toff = 3 minutes for 6,000

1037

cycles. No heat sink or forced-air cooling on the devices shall be permitted.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points)

shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II

herein and applies to subgroup E1 and E2.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of