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MIL-PRF-19500-501 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6051, And 2N6052, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/501E
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
TA = +150°C
operation:
Collector to emitter
3041
Bias condition A, VBE = 1.5 V dc
ICEX2
cutoff current
2N6051
VCE = 80 V dc
5.0
mA dc
2N6052
VCE = 100 V dc
5.0
mA dc
Low temperature
TA = -55°C
operation:
Forward current
3076
VCE = 3 V dc, IC = 6 A dc, pulsed
300
hFE4
transfer ratio
(see 4.5.1)
Subgroup 4
Small signal short circuit
3206
VCE = 3 V dc; IC = 5 A dc;
1,000
hfe
forward current transfer
f = 1 kHz
ratio
Magnitude of small-signal
3306
VCE = 3 V dc, IC = 5 A dc,
10
250
|hfe|
short-circuit forward-
f = 1.0 MHz
current transfer ratio
VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1
Open circuit output
3236
300
pF
Cobo
capacitance
MHz
Pulse response
µs
Turn-on time
VCC = 30 V dc,
2.0
ton
IC = 5 A dc, IB1 = 20 mA dc
µs
Turn-off time
VCC = 30 V dc,
10
toff
IC = 5 A dc, IB1 = IB2, = 20 mA dc
See footnotes at end of table.
9



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