MIL-PRF-19500-502 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6058 And 2N6059, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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The documentation and process conversion

INCH�POUND

measures necessary to comply with this revision

MIL�PRF�19500/502G

shall be completed by 28 May 2014.

28 February 2014

SUPERSEDING

MIL�PRF�19500/502F

12 October 2012

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON,

TYPES 2N6058 AND 2N6059, JAN, JANTX, AND JANTXV

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL�PRF�19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon power Darlington transistors.

Three levels of product assurance are provided for each encapsulated device type as specified in MIL�PRF�19500.

1.2 Physical dimensions. The device package style is TO�204AA (similar to TO�3) in accordance with figure 1.

1.3 Maximum ratings. Unless otherwise specified, TC = +25�C.

VCBO

VCEO

VEBO

TJ and TSTG

Types

TC = +25�C (1)

TC = +100�C

�C

V dc

A dc

2N6058

150

0.2

�55 to +175

2N6059

150

100

0.2

�55 to +175

(1) Derate linearly at 1.00 W/�C above TC > +25�C.

Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218�3990, or emailed to semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

AMSC N/A

FSC 5961