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MIL-PRF-19500-502 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6058 And 2N6059, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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. . . . .
MIL­PRF­19500/502G
* TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High temperature
operation:
Collector to emitter
3041
Bias condition A, VBE = 1.5 V dc
ICEX2
cutoff current
2N6058
VCE = 80 V dc
5.0
mA dc
2N6059
VCE = 100 V dc
5.0
mA dc
Collector to emitter voltage
3071
IC = 6 A dc; IB = 24 mA dc;
VCE(sat)3
2.0
V dc
(saturation voltage)
pulsed (see 4.5.1)
TA = ­55°C
Low temperature operation:
Forward-current
3076
VCE = 3 V dc; IC = 6 A dc;
300
hFE4
transfer ratio
pulsed (see 4.5.1)
Subgroup 4
Small-signal, short-circuit
3206
1,000
VCE = 3 V dc; IC = 5 A dc;
hfe
forward-current transfer
f = 1 kHz
ratio
Magnitude of common-
3306
VCE = 3 V dc; IC = 5 A dc;
10
250
|hfe|
emitter small-signal
f = 1.0 MHz
short-circuit forward-
current transfer ratio
Open-circuit output
3236
VCB = 10 V dc; IE = 0;
300
pF
Cobo
100 kHz ≤ f ≤ 1 MHz
capacitance
Pulse response
µs
Turn-on time
(See figure 2), VCC = 30 V dc;
2.0
ton
IC = 5 A dc; IB = 20 mA dc
µs
Turn-off time
(See figure 2); VCC = 30 V dc;
10
toff
IC = 5 A dc; IB1 = IB2 = 20 mA dc
See footnote at end of table.
9



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