MILPRF19500/502G
* TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3131
See 4.3.1
ZθJC
°C/W
Collector to emitter
3011
Bias condition D, IC = 100 mA dc;
V(BR)CEO
breakdown voltage
pulsed (see 4.5.1)
2N6058
80
V dc
*
2N6059
100
V dc
*
Collector to emitter
3041
Bias condition A, VEB1 = 1.5 V dc
ICEX1
cutoff current
µA dc
2N6058
VCE = 80 V dc
10
*
µA dc
2N6059
VCE = 150 V dc
10
*
Collector to emitter
3041
Bias condition D
ICEO
cutoff current
2N6058
VCE = 40 V dc
1.0
mA dc
2N6059
VCE = 50 V dc
1.0
mA dc
Emitter to base
3061
Bias condition D, VEB = 5 V dc
IEBO
2.0
mA dc
cutoff current
Base to emitter voltage
3066
Test condition B, VCE = 3 V dc;
VBE
2.8
V dc
(nonsaturated)
IC = 6 A dc
Base to emitter voltage
3066
Test condition A, IC = 12 A dc;
VBE(sat)
4.0
V dc
(saturated)
Collector to emitter voltage
3071
IC = 12 A dc; IB = 120 mA dc;
VCE(sat)1
3.0
V dc
(saturation voltage)
pulsed (see 4.5.1)
Collector to emitter voltage
3071
IC = 6 A dc; IB = 24 mA dc;
VCE(sat)2
2.0
V dc
(saturation voltage)
pulsed (see 4.5.1)
Forward-current
3076
VCE = 3 V dc; IC = 1 A dc;
hFE1
1,000
transfer ratio
pulsed (see 4.5.1)
Forward-current
3076
VCE = 3 V dc; IC = 6 A dc;
hFE2
1,000
18,000
transfer ratio
pulsed (see 4.5.1)
Forward-current
3076
VCE = 3 V dc; IC = 12 A dc;
hFE3
150
transfer ratio
pulsed (see 4.5.1)
See footnote at end of table.
8
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