MIL-PRF-19500-502 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6058 And 2N6059, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/502G

TABLE II. Group E inspection (all quality levels) � for qualification and requalification only.

Inspection

Sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

End-point electrical

See table I, subgroup 2 and 4.6 herein.

measurements

Subgroup 2

45 devices

c=0

VCB ≥ 10 V dc, 6,000 cycles.

Intermittent operation life

1037

End-point electrical

See table I, subgroup 2 and 4.6 herein.

measurements

Subgroup 4

Sample size N/A

Thermal impedance curves

Subgroup 8

45 devices

c=0

Reverse voltage leakage

1033

Condition B.

stability