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MIL-PRF-19500-502 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6058 And 2N6059, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/502G

Dimensions

Symbol

Notes

Inches

Millimeters

Min

Max

Min

Max

.875

22.23

.250

.328

6.35

8.33

.495

.525

12.57

13.34

HR1

.131

.188

3.33

4.78

.060

.135

1.52

3.43

.038

.043

0.97

1.09

4,5

.312

.500

7.92

12.7

.050

1.27

4,5

MHD

.151

.161

3.84

4.09

MHS

1.177

1.197

29.90

30.40

.420

.440

10.67

11.18

7, 8

.205

.225

5.21

5.72

7, 4, 8

PS1

.655

.675

16.64

17.15

NOTES:

1. Dimensions are in inches. Millimeters are given for general information only.

2. Body contour is optional within zone defined by dimension CD.

3. At both ends.

4. Both terminals.

5. Dimension LD applies between dimension L1 and LL. Lead diameter shall not exceed twice dimension LD

within dimension L1. Diameter is uncontrolled in dimension L1.

6. Two holes.

7. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below the

seating plane. When gauge is not used, measurement shall be made at seating plane.

8. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm)

convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch

(0.03 mm) concave to .006 inch (0.15 mm) convex overall.

9. The collector shall be electrically connected to the case.

10. In accordance with ASME Y14.5M, diameters are equivalent to φ symbology.

* FIGURE 1. Physical dimensions and schematic circuit (TO�204AA, similar to TO�3) � Continued.