MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/510J

TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Qualification and

MIL-STD-750

Inspection

large lot quality

Method

Conditions

conformance

inspection

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

End-point electrical

See table I, subgroup 2 .

measurements

Subgroup 2

45 devices

c=0

Intermittent life

1037

VCB = 10 V dc, 6,000 cycles, adjust power or current

to achieve ĆTJ = +100�C.

End-point electrical

See table I, subgroup 2 .

measurements

Subgroup 4

Sample size

N/A

Thermal impedance

See MIL-PRF-19500.

curves

Subgroup 5

15 devices

c=0

Barometric pressure

1001

Condition C, see 1.3, all devices.

Subgroup 8

45 devices

c=0

Condition A for devices ≥ 400 V, condition B for

Reverse stability

1033

devices < 400 V.