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MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/510J
Dimensions
Ltr.
Inches
Millimeters
Min
Max
Min
Max
A, C
.205
.215
5.21
5.46
DESIGN DATA
Metallization:
Top:
Aluminum 54,000 Å minimum, 60,000 Å nominal.
Back:
Al/Ti/Ni/Au 10,000 Å minimum, 12,500 Å nominal.
Back side:
Collector.
.012 inch (0.305 mm) ±.002 inch (0.051 mm).
Chip thickness:
Bonding pad:
B = .018 inch (0.46 mm) x .040 (1.02 mm).
E = .018 inch (0.46 mm) x .040 (1.02 mm).
FIGURE 2. JANHCB and JANKCB (B version) die dimensions.
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