MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/510J

TABLE I. Group A inspection - Continued.

Limits

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 5 - Continued

Safe operating area

(See figure 14) clamped inductive sweep

(switching)

TC = +25C; duty cycle ≤ 10 percent;

TP ≈ 5 ms (vary to obtain IC);

RS = 0.1Ω

VCC = 10 V dc

IC = 10 A dc

Clamp voltage:

2N6249, 2N6249T1 2N6249T3 = 200 V dc

2N6250, 2N6250T1 2N6250T3 = 275 V dc

2N6251, 2N6251T1 2N6251T3 = 350 V dc

End-point electrical

table I, subgroup 2

measurements

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL-PRF-19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group B, subgroups 3, 4, and 5 (JANS).

Group C, subgroup 2 and 6.

Group E, subgroup 1.