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MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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. . . . . . .
MIL-PRF-19500/510J
*
4.3.4 Dielectric withstanding voltage.
a.
Magnititude of test voltage...................................900 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage........................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time...................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. Group A inspection shall be performed on each sublot.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
*
Subgroup
Method
Condition
B3
2037
Test condition A, all internal leads for each device shall be pulled separately.
VCB = 10 V dc, adjust power or current to achieve ĆTJ = +100°C.
*
B4
1037
VCB = 10 V dc; adjust TA and PD to achieve TJ = +275°C minimum.
B5
1027
PD = 100 percent of rated PT minimum; TA = +100°C maximum.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
*
Subgroup
Method
Condition
VCB = 10 V dc, adjust power or current to achieve ĆTJ = +100°C.
*
B3
1037
or
VCB = 10 V dc; TJ = +175°C minimum; TA = +30°C
1027
maximum.
9



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