MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/510J

* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E�IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurements

Screen (see table E�IV

JANS

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of

ICEX1 and hFE1

ĆICEX1 = 100 percent of initial value or

2 �A dc, whichever is greater;

ĆhFE1 = �15 percent of initial value.

Subgroup 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICEX1 = 100 percent of initial value or

2 �A dc, whichever is greater;

ĆhFE1 = �25 percent of initial value.

For TO-254AA packages: Method 1081 of

For TO-254AA packages: Method 1081

MIL-STD-750 (see 4.3.4), Endpoints:

of MIL-STD-750 (see 4.3.4), Endpoints:

Subgroup 2 of table I herein.

(1) Thermal impedance (ZθJC) limits shall not exceed figures 7, 8, or 9 thermal impedance curves. This test shall

be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be

repeated in screening requirements.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit used in screen 3c and table I, subgroup 2 shall comply with the thermal

impedance graphs on figures 7, 8, or 9 (less than or equal to the curve value at the same tH time) and/or shall be less

than the process determined statistical maximum limit as outlined in method 3131.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10-30 V dc, TA = +30�C

maximum, TJ = +175�C minimum.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.