MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/510J

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

table I, subgroup 2 herein.

Subgroup

Method

Condition

2036

Test condition A; weight - 10 pounds; time - 15 seconds.

Non-operating 1,500 G; 0.5 ms, 5 blows in each orientation: X1, Y1, Y2, Z1

2016

(total 20 blows).

3131

See 4.5.2. See thermal impedance curves figures 7, 8, and 9.

VCB = 10 V dc; TJ = +175�C minimum; TA =+30�C

1027

maximum.

VCB = 10 V dc, adjust power or current to achieve ĆTJ = +100�C.

1037

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements

(end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

4.5.2 Thermal resistance. Thermal resistance measurement shall be conducted in accordance with test method

3131 of MIL-STD-750. The following details shall apply:

Collector current magnitude during power applications shall be 3.0 A dc.

Collector to emitter voltage magnitude shall be 10 V dc.

Reference temperature measuring point shall be the case.

Reference point temperature shall be +25�C ≤ tr ≤ +75�C and recorded before the last is started.

Mounting arrangement shall be with heat sink to header.

Maximum limit for RθJC see thermal impedance curves figures 7, 8, and 9.

4.5.3 Coil selection for safe operating area (SOA) tests. In selecting coils for use in the clamped and unclamped

inductive SOA tests, prime consideration should be given to the recommended commercially available coil. However,

due to the extreme critical nature of the coil in these circuits and the wide tolerance of some commercially available

coils (+100, -50 percent), it shall be the semiconductor manufacturer's responsibility, to prove upon request,

compliance or equivalency of any coil used (commercial or in-plant designed) to within (+20, -10 percent), of the

specified inductance at the rated current and dc resistance.