MIL-PRF-19500-510 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/510J

NOTES:

1. Either a clamping circuit or clamping diode may be used.

2. The coil used shall provide a minimum inductance of 50 �H at 10 A with a maximum dc resistance of 0.1 Ω

(see 4.5.3).

3. RS ≤ 0.1 Ω, 12 W, 1 percent tolerance maximum (non-inductive).

Procedure:

1. With switch S1 closed set the specified test conditions.

2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero.

3. Perform specified end-point tests.

FIGURE 14. Clamped inductive sweep test circuit.