MIL-PRF-19500-512 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N4029, 2N4033, 2N4033Ua, 2N4033Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankc2N4033, And Janhc2N4033This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö, ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/512K

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of subgroups 1 and 2 of table I herein, inspection only (table

E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is

performed in table I, subgroup 1 herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500,

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-Via (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-

points) requirements shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with

4.5.2, delta requirements only apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B

testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be in accordance with group A,

subgroup 2. Delta requirements shall be in accordance with 4.5.2 and shall be after each step in 4.4.2.2.

4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500.

Subgroup Method

Condition

VCB = 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum ĆTJ of

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+100�C.

VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

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occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa,

adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a

TJ = +225�C minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a

failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from

the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has

been implemented and the devices from the wafer lot are screened to eliminate the failure mode.

Step

Method

Condition

Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve

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TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated PT as

defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

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n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

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