MIL-PRF-19500/512K
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
examination 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents 3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles,
n = 22 devices, c = 0
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Table I, subgroup 2
Precondition TA = +250°C at t = 24
Bond strength 3/ 4/
2037
hours or TA = +300°C at t = 2
hours; n = 11 wires, c = 0
Decap internal visual (design
2075
n = 4 devices, c = 0
verification) 4/
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.3
ZθJX
µA dc
Collector to base cutoff current
3036
10
Bias condition D; VCB = 80 V dc;
ICBO1
pulsed (see 4.5.1)
µA dc
Emitter to base cutoff current
3061
10
Bias condition D; VEB = 5 V dc
IEBO1
Collector to base cutoff current
3036
10
nA dc
Bias condition D; VCB = 60 V dc
ICBO2
Collector to emitter cutoff
3041
25
nA dc
Bias condition A; VBE = 2.0 V dc;
ICEX1
current
VCE = 60 V dc
Base emitter cutoff current
3061
25
nA dc
Bias condition D; VBE = 3.0 V dc
IEBO2
VCE = 5.0 V dc; IC = 100 µA dc
Forward-current transfer ratio
3076
50
hFE1
Forward-current transfer ratio
3076
100
300
VCE = 5.0 V dc; IC = 100 mA dc
hFE2
*
pulsed (see 4.5.1)
Forward-current transfer ratio
3076
70
VCE = 5.0 V dc; IC = 500 mA dc;
hFE3
pulsed (see 4.5.1)
Forward-current transfer ratio
3076
25
VCE = 5.0 V dc; IC = 1.0 A dc;
hFE4
pulsed (see 4.5.1)
See footnotes at end of table.
14
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