MIL-PRF-19500-512 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N4029, 2N4033, 2N4033Ua, 2N4033Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankc2N4033, And Janhc2N4033This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö, ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/512K

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.2.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Delta requirements. Delta requirements shall be as follows:

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

ĆICB02

Collector-base cutoff

3036

Bias condition D,

100 percent of initial

current

value or 5 nA dc,

VCB = 60 V dc

whichever is greater.

�25 percent change

ĆhFE2

Forward current

3076

VCE = 5 V dc;

transfer ratio

from initial reading.

IC = 100 mA dc;

pulsed see 4.5.1

4.5.3 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt

(rms) across the collector-base terminals and measuring the ac voltage drop (Veb ) with a high-impedance rf voltmeter

across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies:

r'b , Cc(ps) = 2 X Veb (millivolts)