MIL-PRF-19500-512 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N4029, 2N4033, 2N4033Ua, 2N4033Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankc2N4033, And Janhc2N4033This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö, ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/512K

* 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500

and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) (2) 3c

Thermal impedance method 3131 of

MIL-STD-750 (see 4.3.3).

ICBO2 and hFE2

Not applicable

ICBO2 and hFE2

ĆICBO2 = 100 percent or 5 nA,

whichever is greater;

ĆhFE2 = �15 percent change from

initial value.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICBO2 = +100 percent of initial value

or 5 nA, whichever is greater.

ĆhFE2 = �15 percent change from

initial value.

* (1) Thermal impedance limits (ZθJX) shall not exceed figures 12, 13, 14, 15, 16, 17, and 18.

* (2) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be

repeated in screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.

4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed on each die in accordance

with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). Measured delay time (tMD) = 70 �s maximum. See table III, subgroup 4 herein.