MIL-PRF-19500-512 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N4029, 2N4033, 2N4033Ua, 2N4033Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankc2N4033, And Janhc2N4033This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö, ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/512K

* TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and 4.5.2 herein.

Subgroup 2

45 devices

c=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000 cycles.

Adjust device current, or power, to achieve a minimum ĆTJ of

+100�C.

Electrical measurements

See table I, subgroup 2 and 4.5.2 herein.

Subgroup 4

Thermal resistance

3131

15 devices,

RθJSP(IS) can be calculated but shall be measured once in the

c=0

same package with a similar die size to confirm calculations

(may apply to multiple specification sheets).

RθJSP(AM) need be calculated only.

Thermal impedance

See MIL-PRF-19500, table E-IX, group E, subgroup 4.

curves

Subgroup 5

Not applicable

Subgroup 6

11 devices

ESD

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.