INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/514D
shall be completed by 3 September 2013.
3 June 2013
SUPERSEDING
MIL-PRF-19500/514C
20 November 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N6274 AND 2N6277, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-3).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT
PT
Types
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
TC = +25°C TC = +100°C
RθJC
(1)
(1)
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N6274
250
143
120
100
6
20
50
0.7
-65 to +200
2N6277
250
143
180
150
6
20
50
0.7
-65 to +200
(1) Derate linearly 1.43 W/°C Between TC = +25°C and TC = +200°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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