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MIL-PRF-19500-514 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6274 And 2N6277, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/514D
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. End-point electrical measurements shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
C2
2036
Test condition A; weight = 10 pounds; time = 15 s.
See 4.3.2, RθJC shall be 0.7 °C/W.
C5
3131
VCE ≥ 20 V dc; TJ = 187.5°C, ± 12.5°C.
C6
1026
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
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