MIL-PRF-19500-527 Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6648, 2N6649, And 2N6650 Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP silicon, darlington power transistor. Three levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/527E

* TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles

Temperature cycling

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 herein.

Electrical measurements

45 devices

Subgroup 2

c=0

TA = +150�C, VCB = 80 percent of rated voltage,

1048

DC blocking life

1,000 hours.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Thermal impedance curves

See MIL-PRF-19500.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

3 devices

Electrostatic discharge (ESD)

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.