MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K

4.5 Methods of inspection and test. Methods of inspection and test shall be as specified in the appropriate tables

and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with

method 3131 of MIL-STD-750. The following details shall apply:

a. Collector current magnitude during power application shall be -500 mA minimum dc.

b. Collector to emitter voltage magnitude shall be -10 V dc.

c. Reference temperature measuring point shall be the case.

d. Reference temperature measuring point shall be within the range +25�C ≤ TR ≤ +35�C. The chosen reference

temperature shall be recorded before the test is started.

e. Mounting arrangement shall be with heat sink to case.

f. See 1.3 for maximum limit of RθJC.