MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

JANS levels

JANTX and JANTXV levels

Not applicable

(1) 3c

Thermal impedance, method 3131

ICES1 and hFE2

Not applicable

48 hours minimum.

ICES1 and hFE2;

ICES1 and hFE2

ĆICES1 = 100 percent of initial value or -100 nA

dc, whichever is greater.

ĆhFE2 = �20 percent

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICES1 = 100 percent of initial value or

-100 nA dc, whichever is greater.

ĆhFE2 = �20 percent

(1) Shall be performed anytime after temperature cycling, screen 3a, and JANTX and JANTXV levels do not need

to be repeated in screening requirements.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = -10- -30 V dc, TA = room

ambient as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to

achieve a junction temperature, TJ = +175�C minimum and a minimum PD = 75 percent of PT maximum rated as

defined in 1.3 herein.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and table I shall comply with the thermal

impedance graph on figures 10, 11, and 12 (less than or equal to the curve value at the same tH time) and shall be

less than the process determined statistical maximum limit as outlined in method 3131.

4.4 Conformance inspection. Conformance inspection shall be as specified herein.

4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.