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MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.100
.105
2.54
2.67
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is ±.005 inch (0.13 mm).
4. The physical characteristics of the die are;
Thickness: .0078 inch (0.198 mm) nominal, tolerance is ±.005 inch (0.13 mm).
5.
Top metal: Aluminum, 25,000 Å minimum, 33,000 Å nominal.
Back metal: Gold 1,500 Å minimum, 2,500 Å nominal.
Back side: Collector.
Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minimum.
FIGURE 2. JANHC and JANKC (B-version) die dimensions.
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