MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIA of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)

shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III

herein. See 4.4.2.2 herein JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points)

requirements shall be after each step and shall be in accordance with table I, subgroup 2 herein. Delta

measurements shall be in accordance with table III herein.

4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500.

Subgroup

Method

Conditions

VCB = -40 V dc �1 V, adjust device current, or power, to achieve a minimum ĆTJ of

1037

+100�C.

1027

(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original

sample). VCB = -10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3) TA ≤ +35�C.

Option 1: 96 hours minimum, sample size in accordance with table E-VIA of

MIL-PRF-19500, adjust PD to achieve TJ = +275�C minimum.

Option 2: 216 hours, sample size = 45, c = 0; adjust PD to achieve TJ = +225�C

minimum.

See 4.5.2.

3131

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot

or from another assembly lot from the same wafer lot. If the new assembly lot option is exercised, the failed

assembly lot shall be scrapped.

Step

Method

Conditions

Steady-state life: 1,000 hours minimum, VCB = -10 V dc, power shall be applied to achieve

1026

TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated PT as defined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

1048

n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

1032

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the

application of final lead finish.