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MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions
specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein, and only apply to
subgroup C6.
4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; (method 2036 MIL-STD 750 not applicable for U3 devices).
1,000 hours at VCB = -10 V dc; power shall be applied to achieve TJ = +150°C minimum and
C6
1026
a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. The sample size
may be increased and the test time decreased as long as the devices are stressed for a
total of 45,000 device hours minimum, and the actual time of test is at least 340 hours.
n = 45, c = 0.
4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; not applicable for U3 devices.
C5
3131
RθJA for TO-205 (see 1.3), RθJC for U3 (see 1.3).
C6
Not applicable.
4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table IV herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2. Delta measurements shall be in accordance with table III
herein.
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