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MIL-PRF-19500-545 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/545K

TABLE II. Group D inspection - Continued.

Inspection 1/ 2/ 3/

Limit

Unit

MIL-STD-750

Method

Conditions

Symbol

Min

Max

Subgroup 2.

Total dose irradiation

1019

Gamma exposure ,VCES = -64 V

Breakdown voltage, collector

3011

-80

V dc

Bias condition D, IC = -100 mA dc; IB = 0,

V(BR)CEO

to emitter

pulsed (see 4.5.1)

�A dc

Collector to emitter cutoff

3041

-2.0

Bias condition C, VCE = -60 V dc; VBE = 0

ICES1

current

Collector to emitter cutoff

3041

-2.0

Bias condition C, VCE = -100 V dc; VBE = 0

ICES2

current

�A dc

Collector to emitter cutoff

3041

-100

Bias condition D, VCE = -40 V dc; IB = 0

ICEO

current

�A dc

Emitter to base cutoff current

3061

-2.0

Bias condition D, VEB = -4 V dc; IC = 0

IEBO1

Emitter to base cutoff current

3061

-2.0

Bias condition D, VEB = -5.5 V dc; IC = 0

IEBO2

Forward-current transfer ratio

3076

VCE = -5 V dc; IC = -50 mA dc

[hFE1] 5/

2N5151

[10]

2N5153

[25]

Forward-current transfer ratio

3076

VCE = -5 V dc; IC = -2.5 A dc

[hFE2] 5/

2N5151

[15]

2N5153

[35]

VCE = -5 V dc; IC = -5 A dc. pulsed

Forward-current transfer ratio

3076

[hFE3] 5/

2N5151

[10]

2N5153

[20]

Base-emitter voltage

3066

-1.67

V dc

Test condition B, VCE = -5 V dc;

VBE

(non-saturated)

IC = -2.5 A dc, pulsed (see 4.5.1)

Base-emitter saturation

3066

Test condition A, IC = -2.5 A dc;

-1.67

V dc

VBE(sat)1

voltage

IB = -250 mA dc, pulsed (see 4.5.1)

Base-emitter saturation

3066

-2.53

V dc

Test condition A, IC = -5 A dc;

VBE(sat)2

voltage

IB = -500 mA dc; pulsed (see 4.5.1)

IC = -2.5 A dc; IB = -250 mA dc

VCE(sat)1

Collector-emitter saturation

3071

-0.86

V dc

voltage

IC = -5 A dc; IB = -500 mA dc

VCE(sat)2

Collector-emitter saturation

3071

-1.73

V dc

voltage

Tests to be performed on all devices receiving radiation exposure.

For sampling plan, see MIL-PRF-19500.

Electrical characteristics apply to all device types unless otherwise noted.

Subgroup 1 is an optional test and shall be specified on the contract when required.

See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and

post-radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value

can never exceed the pre-radiation minimum hFE that it is based upon.