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MIL-PRF-19500-551 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461Us Through 1N6468Us, And 1N6461Urs Through 1N6468Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/551G
TABLE II. Electrical characteristics. 1/
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αV(BR)
V(BR)1 I(BR) VRWM
ID
VC
IPP
V(BR)2
(IRM)
-VC at
at
at
Minimum at Maximum
tp = 1 ms
at
VRWM
IPP for
dc current
IBR
I(BR)
A(pk) = in
tp = 1 ms tp = 20 µs tp = 1 ms
TA =
accordance with
TA =
tr = 8 µs  tr = 10 µs
+ 25°C
column 7 inverse
- 55°C
polarity
µA dc
%/°C
V (pk)
A (pk)
A (pk)
V dc
mA
V(pk)
V dc
mA dc V (pk)
-0.03,
1N6461
5.6
25
5
3,000
9.0
315
56
5.4
367
-3.5
+0.045
1N6462
6.5
20
6
2,500
11.0
258
46
+0.060
6.2
304
-3.2
1N6463
13.6
5
12
500
22.6
125
22
+0.085
13.0
139
-3.8
1N6464
16.4
5
15
500
26.5
107
19
+0.085
15.6
63
-3.8
1N6465
27.0
2
24
50
41.4
69
12
+0.096
25.1
39
-3.6
1N6466
33.0
1
30.5
3
47.5
63
11
+0.098
30.2
34
-3.6
1N6467
43.7
1
40.3
2
63.5
45
8
+0.101
40.0
46
-3.5
1N6468
54.0
1
51.6
2
78.5
35
6
+0.103
48.5
20
-3.4
1/
These limits apply to the US and URS device types also.
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