MIL-PRF-19500-551 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461Us Through 1N6468Us, And 1N6461Urs Through 1N6468Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/551G

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, and III).

4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. Lot accumulation period shall be 3 months in lieu of 6 weeks.

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not require the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurement

(see table E-IV of

JANTX and JANTXV levels

Not applicable

See 4.3.1

Not applicable