MIL-PRF-19500-551 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461Us Through 1N6468Us, And 1N6461Urs Through 1N6468Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/551G

3.5.1 Marking of US and URS versions. For US and URS versions only, all marking may be omitted from the

device except for the cathode marking. US and URS devices shall be marked with a cathode band as a minimum, or

a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. At

the option of the manufacturer, US and URS devices may include laser marking on an end-cap, to include part

number and lot date code for all levels. The prefixes JAN, JANTX, or JANTXV may be abbreviated as J, JX, or JV

respectively. (For example: The part number may be reduced to JV6461).

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 1.3 and table

I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.