MIL-PRF-19500-551 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461Us Through 1N6468Us, And 1N6461Urs Through 1N6468Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/551G

* TABLE III. Group E inspection (all quality levels) for qualification only.

Inspection

Sampling plan

Method

Conditions

45 devices,

Subgroup 1

c=0

500 cycles, condition C, -55�C to +175�C

Temperature cycling

1051

See table I, subgroup 2

Electrical measurements

Subgroup 2

22 devices,

c=0

1,000 hours. See 4.3.1

Life test

1048

See table I, subgroup 2

Electrical measurements

Subgroups 3, 4 and 5

Not applicable

Subgroup 8

See 4.5.2. IPP shall be characterized by the supplier

Peak pulse current

and this data shall be available to the Government.

Test shall be performed on each low and high voltage

device for each structurally identical grouping. Test to

failure.

Electrical measurements

See table I, subgroup 2

Subgroup 9

Resistance to glass

1057

Condition B

cracking.