The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/552G
shall be completed by 28 August 2014.
28 May 2014
SUPERSEDING
MIL-PRF-19500/552F
14 May 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR,
TYPES 1N6469 THROUGH 1N6476, 1N6469US THROUGH 1N6476US,
1N6469URS THROUGH 1N6476URS, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1,500-watt silicon, transient voltage
suppressor diodes. Three levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.6 herein) and as follows:
a. PR = 3 W (derate 20 mW/°C above TA = +25°C) (see figure 4).
b. Derate at 100 mW/°C above TEC = +145°C for surface mount devices. (see figure 5).
c. PPP = 1,500 W at TP = 1 ms.
d. IFSM = 130 A(pk). TP = 8.33 ms (TA = +25°C).
e. -55°C ≤ TJ ≤ +175°C; -55°C ≤ TSTG ≤ +175°C (ambient).
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum test ratings
(see 3.6 herein).
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
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