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MIL-PRF-19500-552 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 Through 1N6476, 1N6469Us Through 1N6476Us, 1N6469Urs Through 1N6476Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/552G
* TABLE IV. Group E inspection (all quality levels) for qualification only.
Inspection
Sampling plan
Method
Conditions
Subgroup 1
n = 45, c = 0
500 cycles, condition C, -55°C to +175°C.
Temperature cycling
1051
Electrical measurements
See table I, subgroup 2.
Subgroup 2
n = 22, c = 0
1,000 hours. See 4.3.1.
Life test
See table I, subgroup 2.
Electrical measurements
Subgroups 3, 4, 5, and 6
Not applicable
Subgroup 8
Peak pulse current
See 4.5.2. IPP shall be characterized by the supplier
and this data shall be available to the Government.
Test shall be performed on each low and high voltage
device for each structurally identical grouping. Test to
failure.
Electrical measurements
See table I, subgroup 2.
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