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MIL-PRF-19500-552 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 Through 1N6476, 1N6469Us Through 1N6476Us, 1N6469Urs Through 1N6476Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/552B
TABLE II. Electrical characteristics.
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VBR1
Test
Working
Maximum
Maximum
Maximum
Maximum
VBR2
VCF
Maximum ID
Maximum
current
peak
standby
clamping
peak pulse
temperature
peak pulse
at
at IPP
current at
minimum at
IBR
reverse
current
voltage
current
coefficient of
current
IBR
IBR
Type
voltage
ID
VC at IPP
IPP
VBR
IPP
min
TA = -55ºC
αVBR
(VWM)
ID
tp = 1 mS
tp=20 µS
Inverse
tr = 10 µS
tr=8 µS
polarity
TA =
(10/1,000 µs)
(8 x 20)
(max)
+ 125ºC
V dc
mA dc
V pk
µA dc
V pk
A pk
%/ºC
V dc
V pk
µA dc
µA dc
1N6469
5.6
50
5
1,500
9.0
167
-.03, +.045
5.4
-3.5
12,000
1N6470
6.5
50
6
1,000
11.0
137
+.060
6.2
-3.2
8,000
Set PPP to
1N6471
13.6
10
12
20
22.6
66
+.085
12.7
-3.8
100
8.5 KW
1N6472
16.4
10
15
10
26.5
57
+.085
15.3
-3.8
100
minimum
1N6473
27.0
5
24
5
41.4
36.5
+.096
24.9
-3.6
100
1N6474
33.0
1
30.5
5
47.5
32
+.098
30.2
-3.6
100
1N6475
43.7
1
40.3
5
63.5
24
+.101
40.0
-3.5
100
1N6476
54.0
1
51.6
5
78.5
19
+.103
48.5
-3.4
100



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