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MIL-PRF-19500-552 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 Through 1N6476, 1N6469Us Through 1N6476Us, 1N6469Urs Through 1N6476Urs, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/552G
NOTE: Power shall be determined from actual clamping voltage
at peak pulse current and pulse time duration (see 4.5.2).
FIGURE 7. Peak pulse power versus pulse time.
FIGURE 8. Current impulse waveform.
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