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MIL-PRF-19500-564 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6849, 2N6849U, 2N6851 And 2N6851U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/564H

* TABLE I. Group A inspection.

Inspection

MIL-STD-750

Limits

Symbol

Unit

Method

Condition

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

C/W

Thermal impedance 2/

3161

See 4.3.4

ZJC

V(BR)DSS

Breakdown voltage,

3407

Bias condition C, VGS = 0V,

ID = -1 mA dc

drain to source

2N6849, 2N6849U

-100

V dc

2N6851, 2N6851U

-200

V dc

VDS  VGS, ID = -0.25 mA

Gate to source voltage

3403

-2.0

-4.0

V dc

VGS(th)1

(threshold)

Gate current

3411

Bias condition C, VGS = +20 V dc

+100

nA dc

IGSSF1

VDS = 0

IGSSR1

Gate current

3411

Bias condition C, VGS = -20 V dc

-100

nA dc

VDS = 0

A dc

Drain current

3413

Bias condition C, VGS = 0,

-25

IDSS1

VDS = 80 percent of rated VDS

rDS(on)1

Static drain to source

3421

VGS = -10 V dc, condition A,

pulsed (see 4.5.1), ID = rated ID2

on-state resistance

(see 1.3)



2N6849, 2N6849U

0.30



2N6851, 2N6851U

0.80

Static drain to source

3421

VGS = -10 V dc, condition A,

rDS(on)2

on-state resistance

pulsed (see 4.5.1), ID = rated ID1,

(see 1.3)



2N6849, 2N6849U

0.32



2N6851, 2N6851U

0.83

Forward voltage

4011

VGS = 0, ID = rated ID1, pulsed (see

VSD

4.5.1)

2N6849, 2N6849U

-4.3

2N6851, 2N6851U

-5.6

See footnote at end of table.