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MIL-PRF-19500-564 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6849, 2N6849U, 2N6851 And 2N6851U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/564H
2N6849
Dimensions
2N6849
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.116
.120
2.95
3.05
B
.181
.185
4.60
4.70
C
.032
.034
0.81
0.86
D
.035
.037
0.89
0.94
E
.024
.026
0.61
0.66
F
.018
.019
0.46
0.48
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  The physical characteristics of the die are: The back metals are chromium,
nickel, and silver and comprise the drain. The top metal is aluminum.
4.  Die thickness is .015 inch (0.381 mm), the tolerance is .0010 inch (0.025 mm).
* FIGURE 4. JANHCB die dimensions (2N6849 only).
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