MIL-PRF-19500-564 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6849, 2N6849U, 2N6851 And 2N6851U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/564H

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

(1) (2)

JANS level

JANTX and JANTXV levels

(3)

Gate stress test (see 4.3.2)

Gate stress test (see 4.3.2).

(3)

Method 3470 of MIL-STD-750 (see 4.3.3),

optional

(3) 3c

Method 3161 of MIL-STD-750 (see 4.3.4)

Subgroup 2 of table 1 herein.

IGSSF1, IGSSR1, IDSS1, subgroup 2 of table 1

herein.

Method 1042 of MIL-STD-750, test condition B

IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1

subgroup 2 of table I herein:

IGSSF1 = 20 nA dc or 100 percent of initial

value, whichever is greater.

IGSSR1 = 20 nA dc or 100 percent of initial

value, whichever is greater.

IDSS1 = 25 A dc or 100 percent of initial

value, whichever is greater.

Method 1042 of MIL-STD-750, test condition A,

Method 1042 of MIL-STD-750, test condition A

t = 240 hours

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

IGSSF1 = 20 nA dc or 100 percent of initial

IGSSF1 = 20 nA dc or  100 percent of initial

value, whichever is greater.

IGSSR1 = 20 nA dc or 100 percent of initial

IGSSR1 = 20 nA dc or  100 percent of initial

value, whichever is greater.

IDSS1 = 25 A dc or 100 percent of initial

IDSS1 = 25 A dc or  100 percent of initial

value, whichever is greater.

rDS(on)1 = 20 percent of initial value.

VGS(th)1 = 20 percent of initial value.

(1)

At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.

(2)

An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.

(3)

Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.