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MIL-PRF-19500-567 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6492, 1N6492U4, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/567E
* TABLE III. Group E inspection (all quality levels) ­ for qualification and requalification only.
Inspection
Qualification
Method
Conditions
Subgroup 1
n = 45, c = 0
Test condition G, 500 cycles, -55°C to +150°C.
Temperature cycling
1051
(air to air)
Electrical measurements
See table I subgroup 2.
Subgroup 2
n = 45, c = 0
t = 1,000 hours, TJ = +125°C, VR = 80 percent
Life test
1048
rated voltage (see 1.3).
See table I subgroup 2.
Electrical measurements
Subgroup 4
Thermal impedance
See MIL-PRF-19500.
curves
Subgroup 10
n = 5, c = 0
4066
IFSM= 80 A(pk), VRM = 45 V(pk), IO = 0.75 A
Surge
ten surges of 8.3 ms each at 1 minute intervals, TA
= +25°C.
Electrical measurements
See table I subgroup 2 (VF and IR only).
11



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